Hot carrier injection hci is a phenomenon in solid state electronic devices where an electron or a hole gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state the term hot refers to the effective temperature used to model carrier density not to the overall temperature of the device. The term hot carrier effects therefore refers to device degradation or instability caused by hot carrier injection according to the 5th edition hitachi semiconductor device reliability handbook there are four 4 commonly encountered hot carrier injection mechanisms. Hot carrier steady state and transient transport in bulk semiconductors and heterostructures is analyzed here using a general balance equation formulation with nonequilibrium phonon occupation and an ambient magnetic field of arbitrary strength. Simulation of hot carriers in semiconductor devices khalid rahmat rle technical report no 591 february 1995 the research laboratory of electronics massachusetts institute of technology cambridge massachusetts 02139 4307 this work was supported in part by the us navy under contract n00174 93 c 0035. This volume contains invited and contributed papers of the ninth international conference on hot carriers in semiconductors hcis 9 held july 3 i august 4 1995 in chicago illinois
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